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| HMC755LP4E v00.0709 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Typical Applications The HMC755LP4E is Ideal for: * Cellular/3G & LTE/4G * WiMAX, WiBro & Fixed Wireless * Military & SATCOM Features High Gain: 31 dB High PAE: 28% @ +33 dBm Pout Low EVM: 2.5% @ Pout = +25 dBm with 54 Mbps OFDM Signal High Output IP3: +43 dBm 11 LINEAR & POWER AMPLIFIERS - SMT * Test Equipment Integrated Detector & Power Control 24 Lead 4x4mm QFN Package: 16mm2 Functional Diagram General Description The HMC755LP4E is a high gain, high linearity GaAs InGaP HBT MMIC Power amplifier covering 2.3 to 2.8 GHz. The amplifier provides 31 dB of gain and +33 dBm of saturated power from a single +5V supply. The power control pins (VEN1, 2, 3) can be used to reduce the RF output power/quiescent current, or for full power down of the PA. The integrated output power detector (VDET) is internally coupled and requires no external components. For +25 dBm OFDM output power (64 QAM, 54 Mbps), the HMC755LP4E achieves an error vector magnitude (EVM) of only 2.5% making it ideal for WiMAX/LTE/4G Applications. The amplifier is packaged in a compact QFN SMT package and requires a minimum of external matching components. Electrical Specifi cations, TA = +25 C, Vcc1, 2, 3 = +5V, VEN1, 2, 3 = +5V, Vcs = +5V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) [1] Error Vector Magnitude @ 2.5 GHz (54 Mbps OFDM Signal @ +22 dBm Pout) Supply Current (Icc1 + Icc2 + Icc3) Control Current (Ien1 + Ien2 + Ien3) Bias Current (Ics) [1] Two-tone output power of +25 dBm per tone, 1 MHz spacing. 400 28 28 Min. Typ. 2.3 - 2.8 31 0.05 10 7 31 33 43 2.5 480 16 12 600 Max. Units GHz dB dB/ C dB dB dBm dBm dBm % mA mA mA 11 - 344 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC755LP4E v00.0709 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Broadband Gain & Return Loss 40 30 Gain vs. Temperature 40 35 RESPONSE (dB) 10 GAIN (dB) 20 S21 S11 S22 30 25 +25 C +85 C - 40 C 0 20 11 2.8 3 3.2 -10 15 -20 1.6 1.9 2.2 2.5 2.8 3.1 3.4 3.7 4 4.3 10 2 2.2 2.4 2.6 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 +25 C +85 C - 40 C -5 RETURN LOSS (dB) -10 RETURN LOSS (dB) -5 -15 +25 C +85 C - 40 C -10 -20 2 2.2 2.4 2.6 2.8 3 3.2 -15 2 2.2 2.4 2.6 2.8 3 3.2 FREQUENCY (GHz) FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 -70 2 2.2 2.4 +25 C +85 C - 40 C 2.6 2.8 3 3.2 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 345 LINEAR & POWER AMPLIFIERS - SMT HMC755LP4E v00.0709 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz P1dB vs. Temperature 40 Psat vs. Temperature 40 35 35 P1dB (dBm) 30 Psat (dBm) +25 C +85 C - 40 C 30 11 LINEAR & POWER AMPLIFIERS - SMT 25 25 +25 C +85 C - 40 C 20 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 20 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 FREQUENCY (GHz) FREQUENCY (GHz) Output IP3 vs. Temperature @ 26 dBm 50 Output IP3 vs. Temperature @ 2.4 GHz 50 45 45 IP3 (dBm) 40 IP3 (dB) 40 35 +25 C +85 C - 40 C 35 +25 C +85 C - 40 C 30 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 30 18 19 20 21 22 23 24 25 26 27 FREQUENCY (GHz) SINGLE TONE POUT (dBm) VDET Output Voltage vs. Temperature 3.5 3 2.5 +25 C +85 C - 40 C Power Compression @ 2.5 GHz 50 Pout (dBm), GAIN (dB), PAE (%) 40 VDET (V) 2 1.5 1 0.5 0 13 17 21 25 29 33 30 20 10 Pout Gain PAE 0 -20 -15 -10 -5 0 5 OUTPUT POWER (dBm) INPUT POWER (dBm) 11 - 346 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC755LP4E v00.0709 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Gain & Power vs. Supply Voltage 50 Noise Figure vs. Temperature 12 10 GAIN (dB), P1dB (dBm), IP3 (dBm) 40 NOISE FIGURE (dB) 8 6 30 Gain P1dB IP3 20 4.5 5 5.5 4 +25 C +85 C - 40 C 11 2.8 2.9 3 2 0 2.2 2.3 2.4 2.5 2.6 2.7 SUPPLY VOLTAGE (V) FREQUENCY (GHz) Power Dissipation 6 5.5 Max Pdiss @ +85C EVM vs. Frequency (54 Mbps OFDM Signal) 7 6 5 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz 2.8 GHz 5 EVM (%) 4.5 4 3.5 3 2.5 2 -20 -15 -10 -5 0 5 4 3 2 1 0 15 17 19 21 23 25 27 INPUT POWER (dBm) OUTPUT POWER (dBm) EVM vs. Temperature @ 2.5 GHz (54 Mbps OFDM Signal) 7 6 5 EVM (%) 4 3 2 1 0 15 17 19 +25 C +85 C - 40 C 21 23 25 27 OUTPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 347 LINEAR & POWER AMPLIFIERS - SMT POWER DISSIPATION (W) HMC755LP4E v00.0709 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc1, Vcc2, Vcc3) Control Voltage (VEN1, 2, 3) RF Input Power (RFIN)(Vcc = +5V) Junction Temperature Continuous Pdiss (T = 85 C) (derate 80 mW/C above 85 C) Thermal Resistance (junction to ground paddle) Storage Temperature 5.5V Vcc +0.5 +5 dBm 150 C 5.2 W 12.5 C/W -65 to +150 C -40 to +85 C Typical Supply Current vs. Supply Voltage Vcc (V) 4.5 5.0 5.5 Icq (mA) 430 480 530 11 LINEAR & POWER AMPLIFIERS - SMT Operating Temperature ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC755LP4E Package Body Material RoHS-compliant Low Stress Injection Molded Plastic Lead Finish 100% matte Sn MSL Rating MSL3 [2] Package Marking [1] H755 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 C 11 - 348 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC755LP4E v00.0709 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Pin Descriptions Pin Number 1, 3, 5, 6, 12 - 14, 18, 19, 21, 22, 24 Function N/C Description These pins are not connected internally. However, all data shown herein was measured with these pins connected to RF/DC ground. Ground: Backside of package has exposed metal paddle that must be connected to ground thru a short path. Vias under the device are required. Interface Schematic 2 GND 4 RFIN This pin is DC coupled and matched to 50 Ohms. 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 349 7 VCS DC power supply pin for bias circuitry. 8 - 10 VEN1 - 3 Power control pins. For max power these pins should be connected to 5V. This voltage can be reduced, or R1-R4 resistor values increased to reduce the quiescent current. For full power down, apply V <0.5V 11 VDET DC voltage output proportional to RFOUT signal. 15, 16, 17 RFOUT RF output and DC bias for the output stage. External RF matching, bypass capacitors, and pull up choke are required as shown in the application circuit. 20 Vcc2 Power supply voltage for the second amplifier stage. External bypass capacitors and pull up choke are required as shown in the application schematic. Power supply voltage for the first amplifier stage. External bypass capacitors are required as shown in the application schematic. 23 Vcc1 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC755LP4E v00.0709 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Evaluation PCB 11 LINEAR & POWER AMPLIFIERS - SMT List of Materials for Evaluation PCB 123643 [1] Item J1, J2 J3, J4 C1 - C10 C11 C12 C13 - C15 C16 C17 C18 - C12 L1 R1 R2 R3 R4 Description PCB Mount SMA Connector 2MM Molex Header 100 pF Capacitor, 0402 Pkg. 3 pF Capacitor Ultra Low ESD, 0603 Pkg. 1.5 pF Capacitor Ultra Low ESD, 0603 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 F Capacitor, Tantalum 4.7 F Capacitor, Tantalum 10000 pF Capacitor, 0402 Pkg. 10 nH Inductor, 0603 Pkg. 0 Ohm Resistor, 0402 Pkg. 200 Ohm Resistor, 0402 Pkg. 300 Ohm Resistor, 0402 Pkg. 130 Ohm Resistor, 0402 Pkg. Item U1 PCB [2] Description HMC755LP4E Power Amplifier 123641 Eval Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes and the evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. 11 - 350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC755LP4E v00.0709 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Application Circuit 11 LINEAR & POWER AMPLIFIERS - SMT 11 - 351 TL1 Impedance Physical Length Electrical Length 27 Ohm 0.033" 6.6 TL2 50 Ohm 0.133" 38 PCB Material: 10 mil Rogers 4350 or Arlon 25FR For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com |
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